View MRF1550FNT1_4351409.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Technical Data
Document Number: MRF1550N Rev. 13, 6/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 175 MHz, 12.5 Volts Output Power -- 50 Watts Power Gain -- 14.5 dB Efficiency -- 55% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Broadband- Full Power Across the Band: 135 - 175 MHz * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1550NT1 MRF1550FNT1
175 MHz, 50 W, 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 1264 - 10, STYLE 1 TO - 272- 6 WRAP PLASTIC MRF1550NT1
CASE 1264A - 03, STYLE 1 TO - 272- 6 PLASTIC MRF1550FNT1
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature
(1)
Symbol VDSS VGS ID PD Tstg TJ
Value - 0.5, +40 20 12 165 0.50 - 65 to +150 200
Unit Vdc Vdc Adc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value(2) 0.75 Unit C/W
Table 3. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 TJ - TC 1. Calculated based on the formula PD = RJC 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Rating 1 Package Peak Temperature 260 Unit C
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF1550NT1 MRF1550FNT1 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 10 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 800 A) Drain- Source On - Voltage (VGS = 5 Vdc, ID = 1.2 A) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 4.0 Adc) Dynamic Characteristics Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) RF Characteristics (In Freescale Test Fixture) Common- Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) Drain Efficiency (VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) f = 175 MHz f = 175 MHz Gps -- -- 14.5 55 -- -- dB % Ciss Coss Crss -- -- -- -- -- -- 500 250 35 pF pF pF VGS(th) RDS(on) VDS(on) 1 -- -- -- -- -- 3 0.5 1 Vdc Vdc IDSS IGSS -- -- -- -- 1 0.5 Adc Adc Symbol Min Typ Max Unit
MRF1550NT1 MRF1550FNT1 2 RF Device Data Freescale Semiconductor
VGG C10
C9
C8
+
R4 R3
C21 L5 C7
C20
C19
C18
+
VDD
R2 R1 N1 RF INPUT C1 C2 C3 C4 C5 Z1 L1 Z2 Z3 L2 Z4 C6 Z5 DUT C11 C12 C13 C14 C15 C16 Z6 Z7 Z8 L3 Z9 L4 Z10 Z11 C17
N2 RF OUTPUT
B1 C1 C2 C3 C4, C16 C5 C6 C7, C17 C8, C18 C9, C19 C10 C11, C12 C13 C14 C15 C20 L1 L2 L3
Ferroxcube #VK200 180 pF, 100 mil Chip Capacitor 10 pF, 100 mil Chip Capacitor 33 pF, 100 mil Chip Capacitor 24 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 240 pF, 100 mil Chip Capacitor 300 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 0.1 F, 100 mil Chip Capacitors 470 pF, 100 mil Chip Capacitor 200 pF, 100 mil Chip Capacitors 22 pF, 100 mil Chip Capacitor 30 pF, 100 mil Chip Capacitor 6.8 pF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 18.5 nH, Coilcraft #A05T 5 nH, Coilcraft #A02T 1 Turn, #24 AWG, 0.250 ID
L4 L5 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Z11 Board
1 Turn, #26 AWG, 0.240 ID 3 Turn, #24 AWG, 0.180 ID Type N Flange Mounts 5.1 , 1/4 W Chip Resistor 39 Chip Resistor (0805) 1 k, 1/8 W Chip Resistor 33 k, 1/4 W Chip Resistor 1.000 x 0.080 Microstrip 0.400 x 0.080 Microstrip 0.200 x 0.080 Microstrip 0.200 x 0.080 Microstrip 0.100 x 0.223 Microstrip 0.160 x 0.080 Microstrip 0.260 x 0.080 Microstrip 0.280 x 0.080 Microstrip 0.270 x 0.080 Microstrip 0.730 x 0.080 Microstrip Glass Teflon(R), 31 mils
Figure 1. 135 - 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS
80 135 MHz 70 Pout , OUTPUT POWER (WATTS) 60 50 155 MHz 40 30 20 10 0 0 1.0 VDD = 12.5 Vdc 2.0 4.0 3.0 Pin, INPUT POWER (WATTS) 5.0 6.0 -20 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) 70 80 175 MHz IRL, INPUT RETURN LOSS (dB) -5 0 VDD = 12.5 Vdc
-10
175 MHz 135 MHz
-15 155 MHz
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss versus Output Power
MRF1550NT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 3
TYPICAL CHARACTERISTICS
16 175 MHz 15 h, DRAIN EFFICIENCY (%) 14 GAIN (dB) 155 MHz 13 12 11 VDD = 12.5 Vdc 10 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) 70 80 30 10 20 40 50 60 30 Pout, OUTPUT POWER (WATTS) 70 155 MHz 60 135 MHz 80
135 MHz
175 MHz
50
40 VDD = 12.5 Vdc 70 80
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
70 Pout , OUTPUT POWER (WATTS) 135 MHz 65 175 MHz 60 155 MHz 55 VDD = 12.5 Vdc Pin = 35 dBm 50 200 400 800 600 IDQ, BIASING CURRENT (mA) 1000 1200
80 155 MHz h, DRAIN EFFICIENCY (%) 70 175 MHz 135 MHz 60
50 VDD = 12.5 Vdc Pin = 35 dBm 40 200 400 600 800 IDQ, BIASING CURRENT (mA) 1000 1200
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus Biasing Current
90 Pout , OUTPUT POWER (WATTS) 80 70 60 50 40 30 10 IDQ = 500 mA Pin = 35 dBm 11 12 13 14 15 135 MHz 175 MHz 155 MHz
80 155 MHz h, DRAIN EFFICIENCY (%) 70 175 MHz 60
135 MHz
50 IDQ = 500 mA Pin = 35 dBm 40 10 11 12 13 14 15
VDD, SUPPLY VOLTAGE (VOLTS)
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1550NT1 MRF1550FNT1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1011 MTTF FACTOR (HOURS X AMPS2)
1010
109
108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 10. MTTF Factor versus Junction Temperature
MRF1550NT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 5
Zo = 10
f = 175 MHz f = 175 MHz ZOL* f = 135 MHz f = 135 MHz Zin
VDD = 12.5 V, IDQ = 500 mA, Pout = 50 W f MHz 135 155 175 Zin Zin 4.1 + j0.5 4.2 + j1.7 3.7 + j2.3 ZOL* 1.0 + j0.6 1.2 + j.09 0.7 + j1.1
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %.
Input Matching Network
Device Under Test
Output Matching Network
Z
in
Z
* OL
Figure 11. Series Equivalent Input and Output Impedance
MRF1550NT1 MRF1550FNT1 6 RF Device Data Freescale Semiconductor
Table 5. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 500 mA
f MHz 50 100 150 200 250 300 350 400 450 500 550 600 S11 |S11| 0.93 0.94 0.95 0.95 0.96 0.97 0.97 0.98 0.98 0.98 0.99 0.98 - 178 - 178 - 178 - 178 - 178 - 178 - 178 - 178 - 178 - 178 - 177 - 178 |S21| 4.817 2.212 1.349 0.892 0.648 0.481 0.370 0.304 0.245 0.209 0.178 0.149 S21 80 69 61 54 51 47 46 43 43 43 41 41 |S12| 0.009 0.009 0.008 0.006 0.005 0.004 0.005 0.001 0.005 0.003 0.007 0.010 S12 - 39 -3 -8 - 13 -7 -8 4 15 81 84 70 106 |S22| 0.86 0.88 0.90 0.92 0.93 0.95 0.95 0.97 0.97 0.97 0.98 0.96 S22 - 176 - 175 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 175 - 175
IDQ = 2.0 mA
f MHz 50 100 150 200 250 300 350 400 450 500 550 600 S11 |S11| 0.93 0.94 0.95 0.95 0.96 0.97 0.97 0.98 0.98 0.98 0.99 0.98 - 177 - 178 - 178 - 178 - 178 - 178 - 178 - 178 - 178 - 177 - 177 - 178 |S21| 4.81 2.20 1.35 0.89 0.65 0.48 0.37 0.30 0.25 0.21 0.18 0.15 S21 80 69 61 54 51 47 46 43 43 44 41 41 |S12| 0.003 0.006 0.003 0.004 0.001 0.004 0.006 0.007 0.006 0.006 0.002 0.004 S12 - 119 4 -1 18 28 77 85 53 74 84 106 116 |S22| 0.93 0.93 0.93 0.93 0.94 0.94 0.95 0.96 0.97 0.97 0.97 0.96 S22 - 178 - 178 - 177 - 176 - 176 - 175 - 175 - 174 - 174 - 174 - 175 - 174
IDQ = 4.0 mA
f MHz 50 100 150 200 250 300 350 S11 |S11| 0.97 0.96 0.96 0.96 0.97 0.97 0.97 - 179 - 179 - 179 - 179 - 179 - 179 - 179 |S21| 5.04 2.43 1.60 1.14 0.89 0.71 0.57 S21 87 82 77 74 71 68 67 |S12| 0.002 0.006 0.004 0.003 0.004 0.006 0.006 S12 - 116 42 13 43 65 68 74 |S22| 0.94 0.94 0.94 0.95 0.95 0.95 0.97 S22 - 179 - 178 - 177 - 176 - 175 - 175 - 174 (continued)
MRF1550NT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 7
Table 5. Common Source Scattering Parameters (VDD = 12.5 Vdc) (continued) IDQ = 4.0 mA (continued)
f MHz 400 450 500 550 600 S11 |S11| 0.97 0.98 0.98 0.98 0.98 - 179 - 178 - 178 - 178 - 178 |S21| 0.49 0.41 0.36 0.32 0.27 S21 63 63 62 58 58 |S12| 0.005 0.005 0.003 0.004 0.009 S12 58 73 128 57 83 |S22| 0.97 0.98 0.98 0.99 0.98 S22 - 173 - 173 - 173 - 174 - 174
MRF1550NT1 MRF1550FNT1 8 RF Device Data Freescale Semiconductor
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS This device is a common - source, RF power, N - Channel enhancement mode, Lateral Metal - Oxide Semiconductor Field - Effect Transistor (MOSFET). Freescale Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to - drain (Cgd), and gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. drain - source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 500 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line.
Drain Cgd Gate Cds Cgs Source Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd
DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The
MRF1550NT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 9
AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large - signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two - port stability analysis with this device's S - parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, "RF Small - Signal Design Using Two - Port Parameters" for a discussion of two port network theory and stability.
MRF1550NT1 MRF1550FNT1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF1550NT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 11
MRF1550NT1 MRF1550FNT1 12 RF Device Data Freescale Semiconductor
MRF1550NT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 13
MRF1550NT1 MRF1550FNT1 14 RF Device Data Freescale Semiconductor
MRF1550NT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 15
MRF1550NT1 MRF1550FNT1 16 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN211A: Field Effect Transistors in Theory and Practice * AN215A: RF Small - Signal Design Using Two - Port Parameters * AN721: Impedance Matching Networks Applied to RF Power Transistors * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 12 Date Feb. 2008 Description * Changed DC Bias IDQ value from 150 to 500 to match Functional Test IDQ specification, p. 9 * Replaced Case Outline 1264 - 09 with 1264 - 10, Issue L, p. 1, 11 - 13. Removed Drain - ID label from top view and View Y - Y. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact. Renamed E2 with E3. Added Pin 7 designation. Corrected positional tolerance for bolt hole radius. Added JEDEC Standard Package Number. * Replaced Case Outline 1264A - 02 with 1264A - 03, Issue D, p. 1, 14 - 16. Removed Drain - ID label from View Y - Y. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact (Changed D2 and E2 dimensions from basic to .604 Min and .162 Min, respectively). Added dimension E3. Added Pin 7 designation. Corrected positional tolerance for bolt hole radius. Added JEDEC Standard Package Number. * Added Product Documentation and Revision History, p. 17 13 June 2008 * Corrected specified performance values for power gain and efficiency on p. 1 to match typical performance values in the functional test table on p. 2
MRF1550NT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 17
How to Reach Us:
Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or +1 - 303- 675- 2140 Fax: +1 - 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2008. All rights reserved.
RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp.
MRF1550NT1 MRF1550FNT1
Rev. 18 13, 6/2008 Document Number: MRF1550N
RF Device Data Freescale Semiconductor

▲Up To Search▲

Price & Availability of MRF1550FNT1

	To Download MRF1550FNT1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .